Announcing the Final Examination of Ekavut Kritchanchai for the degree of Doctor of Philosophy Time & Location: March 2, 2016 at 1:00 PM in HEC 450 Title: RF CIRCUIT DESIGNS FOR RELIABILITY AND PROCESS VARIABILITY RESILIENCE
نویسنده
چکیده
Complementary metal oxide semiconductor (CMOS) radio frequency (RF) circuit design has been an ever-lasting research field. It has gained so much attention since RF circuits offer high mobility and wide-band efficiency, while CMOS technology provides the advantage of low cost and high integration capability. At the same time, CMOS device size continues to scale to the nanometer regime. Reliability issues with RF circuits have become more challenging than ever before. Reliability mechanisms, such as gate oxide breakdown, hot carrier injection, negative bias temperature instability, have been amplified as the device size shrinks. In addition, process variability becomes a new design paradigm in modern RF circuits.
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